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Impact of Process Integration Issues on 250 nm Gate GaN HEMT Device RF Performance

IFCPAR/ CEFIPRA674 subscribers

Why it's on BrighterTube

Advanced · Editorial review · 85% confidence

Round-16 hunt: picked; source: course-code search in local formats (r16 wave 3); channel screens (sellers/exam/re-upload/devotional/vendor/events), provenance check, vendor/seller/devotional recheck and quality tier A passed; strict per-title check + final strict pass; oEmbed verified.

What you'll learn

A 38-minute video from IFCPAR/ CEFIPRA: “Impact of Process Integration Issues on 250 nm Gate GaN HEMT Device RF Performance”.

Engineering

Video by IFCPAR/ CEFIPRA, played through YouTube's embedded player.